Device TypePackage TypePackage FormPackage Dimensions L x W x H (mm)Peak Wavelength λp (nm)Spectral Bandwidth (nm)OutputAngle of Half Sensitivity φ (± deg)Photo Sensitive Area (mm2)Photo TransistorsLeadedT-1Ø 3925λ 0.5 = 875 to 1000Ica = 3.2 mA30
TEFT4300 |
RFQ for TEFT4300 |
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| Product | Manufacturers | Pack | D/C | |||||||||
| TEFT4300 | - | DIP-2 | 02+ |
TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T1 (ø 3 mm) plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with 900nm). The plastic lens provides a wide viewing angle of ± 30.
Typical Application |
Features |
| ·Optical switches·Counters and sorters·Interrupters·Tape and card readers·Encoders·Position sensors | · High radiant sensitivity· Fast response times· T1 (ø 3 mm) plastic package with IR filter· Additional polarity sign· Wide viewing angle j = ± 30· Suitable for near infrared radiation· Matches with TSUS4300 GaAs infrared emitter |
| Parameter | Test condition | Symbol | Value | Unit |
| Collector Emitter Voltage | VCEO | 6 | V | |
| Emitter Collector Voltage | VECO | 1.5 | V | |
| Collector Current | IC | 20 | mA | |
| Peak Collector Current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA |
| Total Power Dissipation | Tamb 55 °C | Ptot | 100 | mW |
| Junction temperature | Tj | 100 | °C | |
| Storage temperature range | Tstg | 55...+100 | °C | |
| Soldering temperature | t 3 s, 2 mm from case | Tsd | 260 | °C |
| Thermal Resistance Junction/Ambient | RthJA | 450 | K/W |